I had been looking through the web but could not uncover any info demonstrate how minimal threshold voltage is fast but take in far more ability And the way superior threshold voltage is slow but consumes very low energy.
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You are able to modify the talked about parameters, and compare it which has a "fantastic" consequence which will take 2 several hours siumlation time. Based on your criteria, you'll be able to increase the simulation time.
So can any person make sure you explain how FET with very low threshold voltage has increased speed and better leakage present though FET with substantial threshold will likely be gradual but minimal on energy?
知乎,让每一次点击都充满意义 —— 欢迎来到知乎,发现问题背后的世界。
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